PART |
Description |
Maker |
MRF65225D |
MRF6522-5R1 RF Power Transistor
|
Motorola
|
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V PNP Low Sat Transistor TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors Diodes Incorporated Zetex Semiconductor PLC
|
IPB100N08S2L-07 IPP100N08S2L-07 SP0002-19052 SP000 |
100 A, 75 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor OptiMOSPower-Transistor
|
Infineon Technologies AG
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840 NPN Silicon Power Transistor
|
AUK, Corp. AUK[AUK corp]
|
IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 SP0000-8 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管 OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
|
Maxim Integrated Products, Inc. Infineon Technologies AG
|
IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 SP000 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管 OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
|
Motorola AMERICAN MICROSEMICONDUCTOR INC
|
CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202 Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp. CENTRAL[Central Semiconductor Corp]
|